IXXP12N65B4D1

Part NumberIXXP12N65B4D1

ManufacturerIXYS

DescriptionIGBT

DatasheetIXXP12N65B4D1

Package / CaseTO-220-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionIGBT 650V 38A 160W Through Hole TO-220AB

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IXXP12N65B4D1 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - IGBTs - Single

Datasheet

IXXP12N65B4D1

Standard Package

Manufacturer

IXYS

Series

XPT™, GenX4™

Packaging

Tube

Part Status

Active

IGBT Type

Voltage - Collector Emitter Breakdown (Max)

650V

Current - Collector (Ic) (Max)

38A

Current - Collector Pulsed (Icm)

70A

Vce(on) (Max) @ Vge, Ic

1.95V @ 15V, 12A

Power - Max

160W

Switching Energy

440µJ (on), 220µJ (off)

Input Type

Standard

Gate Charge

34nC

Td (on/off) @ 25°C

13ns/158ns

Test Condition

400V, 12A, 20Ohm, 15V

Reverse Recovery Time (trr)

43ns

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

TO-220AB

All categories

IXXP12N65B4D1

Part NumberIXXP12N65B4D1

ManufacturerIXYS

DescriptionIGBT

DatasheetIXXP12N65B4D1

Package / CaseTO-220-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionIGBT 650V 38A 160W Through Hole TO-220AB

IXXP12N65B4D1 - Product Attributes

IXXP12N65B4D1 - Tags