IXTY1R4N120PHV

Part NumberIXTY1R4N120PHV

ManufacturerIXYS

DescriptionMOSFET N-CH

DatasheetIXT(Y,A,P)1R4N120P

Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 1200V 1.4A (Tc) 86W (Tc) Surface Mount TO-252

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IXTY1R4N120PHV - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

IXT(Y,A,P)1R4N120P

Standard Package

Manufacturer

IXYS

Series

Polar™

Packaging

Tube

Part Status

Active

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

1200V

Current - Continuous Drain (Id) @ 25°C

1.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

13Ohm @ 700mA, 10V

Vgs(th) (Max) @ Id

4.5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

24.8nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

666pF @ 25V

FET Feature

Power Dissipation (Max)

86W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-252

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

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