IXTU01N100D

Part NumberIXTU01N100D

ManufacturerIXYS

DescriptionMOSFET N-CH 1000V 0.1A TO-251

DatasheetIXT(P,U,Y)01N100D

Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 1000V 100mA (Tc) 1.1W (Ta), 25W (Tc) Through Hole TO-251

To learn about the specification of IXTU01N100D, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add IXTU01N100D with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of IXTU01N100D.
We are offering IXTU01N100D for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

IXTU01N100D - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

IXT(P,U,Y)01N100D

Standard Package

Manufacturer

IXYS

Series

Packaging

Tube

Part Status

Active

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

1000V

Current - Continuous Drain (Id) @ 25°C

100mA (Tc)

Drive Voltage (Max Rds On, Min Rds On)

Rds On (Max) @ Id, Vgs

80Ohm @ 50mA, 0V

Vgs(th) (Max) @ Id

5V @ 25µA

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

120pF @ 25V

FET Feature

Depletion Mode

Power Dissipation (Max)

1.1W (Ta), 25W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-251

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA

All categories