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IXTT3N200P3HV

IXTT3N200P3HV

Part NumberIXTT3N200P3HV

ManufacturerIXYS

Description2000V TO 3000V POLAR3 POWER MOSF

DatasheetIXT(H,T)3N200P3HV

Package / CaseTO-268-3, D³Pak (2 Leads + Tab), TO-268AA

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 2000V 3A (Tc) 520W (Tc) Surface Mount TO-268

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IXTT3N200P3HV - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IXT(H,T)3N200P3HV
Standard Package	30
Manufacturer	IXYS
Series	-
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	2000V
Current - Continuous Drain (Id) @ 25°C	3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	8Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	70nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1860pF @ 25V
FET Feature	-
Power Dissipation (Max)	520W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-268
Package / Case	TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

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IXTT3N200P3HV - Tags

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