IXTR32P60P

Part NumberIXTR32P60P

ManufacturerIXYS

DescriptionMOSFET P-CH 600V 18A ISOPLUS247

DatasheetIXTR32P60P

Package / CaseISOPLUS247™

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 600V 18A (Tc) 310W (Tc) Through Hole ISOPLUS247™

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IXTR32P60P - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

IXTR32P60P

Standard Package

Manufacturer

IXYS

Series

PolarP™

Packaging

Tube

Part Status

Active

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

18A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

385mOhm @ 16A, 10V

Vgs(th) (Max) @ Id

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

196nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

11100pF @ 25V

FET Feature

Power Dissipation (Max)

310W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

ISOPLUS247™

Package / Case

ISOPLUS247™

All categories

IXTR32P60P

Part NumberIXTR32P60P

ManufacturerIXYS

DescriptionMOSFET P-CH 600V 18A ISOPLUS247

DatasheetIXTR32P60P

Package / CaseISOPLUS247™

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 600V 18A (Tc) 310W (Tc) Through Hole ISOPLUS247™

IXTR32P60P - Product Attributes

IXTR32P60P - Tags