IXTR200N10P

Part NumberIXTR200N10P

ManufacturerIXYS

DescriptionMOSFET N-CH 100V 120A ISOPLUS247

DatasheetIXTR200N10P

Package / CaseISOPLUS247™

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 100V 120A (Tc) 300W (Tc) Through Hole ISOPLUS247™

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IXTR200N10P - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

IXTR200N10P

Standard Package

Manufacturer

IXYS

Series

HiPerFET™, PolarP2™

Packaging

Tube

Part Status

Active

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

120A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

8mOhm @ 60A, 10V

Vgs(th) (Max) @ Id

5V @ 500µA

Gate Charge (Qg) (Max) @ Vgs

235nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

7600pF @ 25V

FET Feature

Power Dissipation (Max)

300W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

ISOPLUS247™

Package / Case

ISOPLUS247™

All categories

IXTR200N10P

Part NumberIXTR200N10P

ManufacturerIXYS

DescriptionMOSFET N-CH 100V 120A ISOPLUS247

DatasheetIXTR200N10P

Package / CaseISOPLUS247™

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 100V 120A (Tc) 300W (Tc) Through Hole ISOPLUS247™

IXTR200N10P - Product Attributes

IXTR200N10P - Tags