IXTQ200N10T


IXTQ200N10T

Part NumberIXTQ200N10T

Manufacturer

Description

Datasheet

Package / CaseTO-3P-3, SC-65-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

IXTQ200N10T - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package30
ManufacturerIXYS
SeriesTrenchMV™
PackagingTube
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C200A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs5.5mOhm @ 50A, 10V
Vgs(th) (Max) @ Id4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs152nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds9400pF @ 25V
FET Feature-
Power Dissipation (Max)550W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-3P
Package / CaseTO-3P-3, SC-65-3

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IXTQ200N10T - Tags

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