IXTQ200N06P

Part NumberIXTQ200N06P

ManufacturerIXYS

DescriptionMOSFET N-CH 60V 200A TO-3P

DatasheetIXTQ200N06P

Package / CaseTO-3P-3, SC-65-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 60V 200A (Tc) 714W (Tc) Through Hole TO-3P

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IXTQ200N06P - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

IXTQ200N06P

Standard Package

Manufacturer

IXYS

Series

PolarHT™

Packaging

Tube

Part Status

Active

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

200A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

5mOhm @ 400A, 15V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

200nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

5400pF @ 25V

FET Feature

Power Dissipation (Max)

714W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-3P

Package / Case

TO-3P-3, SC-65-3

All categories

IXTQ200N06P

Part NumberIXTQ200N06P

ManufacturerIXYS

DescriptionMOSFET N-CH 60V 200A TO-3P

DatasheetIXTQ200N06P

Package / CaseTO-3P-3, SC-65-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 60V 200A (Tc) 714W (Tc) Through Hole TO-3P

IXTQ200N06P - Product Attributes

IXTQ200N06P - Tags