IXTQ170N10P

Part NumberIXTQ170N10P

ManufacturerIXYS

DescriptionMOSFET N-CH 100V 170A TO-3P

DatasheetIXT(K,Q,T)170N10P

Package / CaseTO-3P-3, SC-65-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 100V 170A (Tc) 715W (Tc) Through Hole TO-3P

To learn about the specification of IXTQ170N10P, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add IXTQ170N10P with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of IXTQ170N10P.
We are offering IXTQ170N10P for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

IXTQ170N10P - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

IXT(K,Q,T)170N10P

Standard Package

Manufacturer

IXYS

Series

Polar™

Packaging

Tube

Part Status

Active

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

170A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

9mOhm @ 500mA, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

198nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

6000pF @ 25V

FET Feature

Power Dissipation (Max)

715W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-3P

Package / Case

TO-3P-3, SC-65-3

All categories