IXTQ160N10T

Part NumberIXTQ160N10T

ManufacturerIXYS

DescriptionMOSFET N-CH 100V 160A TO-3P

DatasheetIXT(H,Q)160N10T

Package / CaseTO-3P-3, SC-65-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 100V 160A (Tc) 430W (Tc) Through Hole TO-3P

To learn about the specification of IXTQ160N10T, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add IXTQ160N10T with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of IXTQ160N10T.
We are offering IXTQ160N10T for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

IXTQ160N10T - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

IXT(H,Q)160N10T

Standard Package

Manufacturer

IXYS

Series

TrenchMV™

Packaging

Tube

Part Status

Active

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

160A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

7mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

132nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

6600pF @ 25V

FET Feature

Power Dissipation (Max)

430W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-3P

Package / Case

TO-3P-3, SC-65-3

All categories