IXTQ102N20T

Part NumberIXTQ102N20T

ManufacturerIXYS

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Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Standard Package	30
Manufacturer	IXYS
Series	TrenchHV™
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25°C	102A (Tc)
Rds On (Max) @ Id, Vgs	23mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id	4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	114nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	6800pF @ 25V
FET Feature	-
Power Dissipation (Max)	750W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-3P
Package / Case	TO-3P-3, SC-65-3