IXTP8N65X2M

Part NumberIXTP8N65X2M

ManufacturerIXYS

DescriptionMOSFET N-CH 650V 4A X2 TO-220

DatasheetIXTP8N65X2M

Package / CaseTO-220-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 650V 4A (Tc) 32W (Tc) Through Hole TO-220

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IXTP8N65X2M - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

IXTP8N65X2M

Standard Package

Manufacturer

IXYS

Series

Packaging

Tube

Part Status

Active

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

4A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

550mOhm @ 4A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

12nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

800pF @ 25V

FET Feature

Power Dissipation (Max)

32W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220

Package / Case

TO-220-3

All categories

IXTP8N65X2M

Part NumberIXTP8N65X2M

ManufacturerIXYS

DescriptionMOSFET N-CH 650V 4A X2 TO-220

DatasheetIXTP8N65X2M

Package / CaseTO-220-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 650V 4A (Tc) 32W (Tc) Through Hole TO-220

IXTP8N65X2M - Product Attributes

IXTP8N65X2M - Tags