IXTP4N80P


IXTP4N80P

Part NumberIXTP4N80P

Manufacturer

Description

Datasheet

Package / CaseTO-220-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

IXTP4N80P - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package50
ManufacturerIXYS
SeriesPolarHV™
PackagingTube
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25°C3.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs3.4Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id5.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs14.2nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds750pF @ 25V
FET Feature-
Power Dissipation (Max)100W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

IXTP4N80P - Tags

IXTP4N80P IXTP4N80P PDF IXTP4N80P datasheet IXTP4N80P specification IXTP4N80P image IXTP4N80P India Renesas Electronics India IXTP4N80P buy IXTP4N80P IXTP4N80P price IXTP4N80P distributor IXTP4N80P supplier IXTP4N80P wholesales