IXTP4N70X2M

Part NumberIXTP4N70X2M

ManufacturerIXYS

DescriptionMOSFET N-CH

DatasheetIXTP4N70X2M

Package / CaseTO-220-3 Full Pack, Isolated Tab

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 700V 4A (Tc) 30W (Tc) Through Hole TO-220 Isolated Tab

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IXTP4N70X2M - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

IXTP4N70X2M

Standard Package

Manufacturer

IXYS

Series

Packaging

Tube

Part Status

Active

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

700V

Current - Continuous Drain (Id) @ 25°C

4A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

850mOhm @ 2A, 10V

Vgs(th) (Max) @ Id

4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

11.8nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

386pF @ 25V

FET Feature

Power Dissipation (Max)

30W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220 Isolated Tab

Package / Case

TO-220-3 Full Pack, Isolated Tab

All categories

IXTP4N70X2M

Part NumberIXTP4N70X2M

ManufacturerIXYS

DescriptionMOSFET N-CH

DatasheetIXTP4N70X2M

Package / CaseTO-220-3 Full Pack, Isolated Tab

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 700V 4A (Tc) 30W (Tc) Through Hole TO-220 Isolated Tab

IXTP4N70X2M - Product Attributes

IXTP4N70X2M - Tags