IXTP1R4N120P

Part NumberIXTP1R4N120P

ManufacturerIXYS

DescriptionMOSFET N-CH 1200V 1.4A TO-220

DatasheetIXT(Y,A,P)1R4N120P

Package / CaseTO-220-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 1200V 1.4A (Tc) 86W (Tc) Through Hole TO-220AB

To learn about the specification of IXTP1R4N120P, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add IXTP1R4N120P with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of IXTP1R4N120P.
We are offering IXTP1R4N120P for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

IXTP1R4N120P - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

IXT(Y,A,P)1R4N120P

Standard Package

Manufacturer

IXYS

Series

Polar™

Packaging

Tube

Part Status

Active

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

1200V

Current - Continuous Drain (Id) @ 25°C

1.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

13Ohm @ 500mA, 10V

Vgs(th) (Max) @ Id

4.5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

24.8nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

666pF @ 25V

FET Feature

Power Dissipation (Max)

86W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

All categories