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IXTP110N12T2

IXTP110N12T2

Part NumberIXTP110N12T2

ManufacturerIXYS

Description120V/110A TRENCHT2 POWER MOSFET

DatasheetIXT(A,P)110N12T2

Package / CaseTO-220-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 120V 110A (Tc) 517W (Tc) Through Hole TO-220AB

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IXTP110N12T2 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IXT(A,P)110N12T2
Standard Package	50
Manufacturer	IXYS
Series	TrenchT2™
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	120V
Current - Continuous Drain (Id) @ 25°C	110A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	14mOhm @ 55A, 10V
Vgs(th) (Max) @ Id	4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	120nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	6570pF @ 25V
FET Feature	-
Power Dissipation (Max)	517W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220AB
Package / Case	TO-220-3

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