IXTN210P10T

Part NumberIXTN210P10T

ManufacturerIXYS

DescriptionMOSFET P-CH 100V 210A SOT-227

DatasheetIXTN210P10T

Package / CaseSOT-227-4, miniBLOC

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 100V 210A (Tc) 830W (Tc) Chassis Mount SOT-227B

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IXTN210P10T - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

IXTN210P10T

Standard Package

Manufacturer

IXYS

Series

TrenchP™

Packaging

Tube

Part Status

Active

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

210A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

7.5mOhm @ 105A, 10V

Vgs(th) (Max) @ Id

4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

740nC @ 10V

Vgs (Max)

±15V

Input Capacitance (Ciss) (Max) @ Vds

69500pF @ 25V

FET Feature

Power Dissipation (Max)

830W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Chassis Mount

Supplier Device Package

SOT-227B

Package / Case

SOT-227-4, miniBLOC

All categories

IXTN210P10T

Part NumberIXTN210P10T

ManufacturerIXYS

DescriptionMOSFET P-CH 100V 210A SOT-227

DatasheetIXTN210P10T

Package / CaseSOT-227-4, miniBLOC

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 100V 210A (Tc) 830W (Tc) Chassis Mount SOT-227B

IXTN210P10T - Product Attributes

IXTN210P10T - Tags