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IXTN170P10P

IXTN170P10P

Part NumberIXTN170P10P

ManufacturerIXYS

DescriptionMOSFET P-CH 100V 170A SOT227

DatasheetIXTN170P10P

Package / CaseSOT-227-4, miniBLOC

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 100V 170A (Tc) 890W (Tc) Chassis Mount SOT-227B

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IXTN170P10P - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IXTN170P10P
Standard Package	10
Manufacturer	IXYS
Series	PolarP™
Packaging	Tube
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	170A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	12mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	240nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	12600pF @ 25V
FET Feature	-
Power Dissipation (Max)	890W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Chassis Mount
Supplier Device Package	SOT-227B
Package / Case	SOT-227-4, miniBLOC

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