IXTM5N100

Part NumberIXTM5N100

ManufacturerIXYS

DescriptionPOWER MOSFET TO-3

DatasheetIXTH/IXTM 5N100(A)

Package / CaseTO-204AA, TO-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 1000V 5A (Tc) 180W (Tc) Through Hole TO-204AA

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IXTM5N100 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

IXTH/IXTM 5N100(A)

Standard Package

Manufacturer

IXYS

Series

Packaging

Tube

Part Status

Last Time Buy

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

1000V

Current - Continuous Drain (Id) @ 25°C

5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

2.4Ohm @ 2.5A, 10V

Vgs(th) (Max) @ Id

4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

130nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2600pF @ 25V

FET Feature

Power Dissipation (Max)

180W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-204AA

Package / Case

TO-204AA, TO-3

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