IXTM40N30

Part NumberIXTM40N30

ManufacturerIXYS

DescriptionPOWER MOSFET TO-3

DatasheetIXTH(35,40)N30, IXTM40N30

Package / CaseTO-204AE

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 300V 40A (Tc) 300W (Tc) Through Hole TO-204AE

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IXTM40N30 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

IXTH(35,40)N30, IXTM40N30

Standard Package

Manufacturer

IXYS

Series

GigaMOS™

Packaging

Tube

Part Status

Last Time Buy

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

300V

Current - Continuous Drain (Id) @ 25°C

40A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

88mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

220nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4600pF @ 25V

FET Feature

Power Dissipation (Max)

300W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-204AE

Package / Case