IXTM35N30

Part NumberIXTM35N30

ManufacturerIXYS

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Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Standard Package	20
Manufacturer	IXYS
Series	GigaMOS™
Packaging	Tube
Part Status	Last Time Buy
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	300V
Current - Continuous Drain (Id) @ 25°C	35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	100mOhm @ 17.5A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	220nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	4600pF @ 25V
FET Feature	-
Power Dissipation (Max)	300W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-204AE
Package / Case	TO-204AE