IXTM12N100

Part NumberIXTM12N100

ManufacturerIXYS

DescriptionPOWER MOSFET TO-3

DatasheetIXT(H,M)(10,12)N100

Package / CaseTO-204AA, TO-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 1000V 12A (Tc) 300W (Tc) Through Hole TO-204AA

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IXTM12N100 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

IXT(H,M)(10,12)N100

Standard Package

Manufacturer

IXYS

Series

GigaMOS™

Packaging

Tube

Part Status

Last Time Buy

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

1000V

Current - Continuous Drain (Id) @ 25°C

12A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.05Ohm @ 6A, 10V

Vgs(th) (Max) @ Id

4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

170nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4000pF @ 25V

FET Feature

Power Dissipation (Max)

300W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-204AA

Package / Case

TO-204AA, TO-3

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