IXTK200N10P

Part NumberIXTK200N10P

ManufacturerIXYS

DescriptionMOSFET N-CH 100V 200A TO-264

DatasheetIXTK200N10P

Package / CaseTO-264-3, TO-264AA

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 100V 200A (Tc) 800W (Tc) Through Hole TO-264 (IXTK)

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IXTK200N10P - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

IXTK200N10P

Standard Package

Manufacturer

IXYS

Series

PolarHT™

Packaging

Tube

Part Status

Active

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

200A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

7.5mOhm @ 100A, 10V

Vgs(th) (Max) @ Id

5V @ 500µA

Gate Charge (Qg) (Max) @ Vgs

240nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

7600pF @ 25V

FET Feature

Power Dissipation (Max)

800W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-264 (IXTK)

Package / Case

TO-264-3, TO-264AA

All categories

IXTK200N10P

Part NumberIXTK200N10P

ManufacturerIXYS

DescriptionMOSFET N-CH 100V 200A TO-264

DatasheetIXTK200N10P

Package / CaseTO-264-3, TO-264AA

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 100V 200A (Tc) 800W (Tc) Through Hole TO-264 (IXTK)

IXTK200N10P - Product Attributes

IXTK200N10P - Tags