IXTJ36N20

Part NumberIXTJ36N20

ManufacturerIXYS

DescriptionMOSFET N-CH 200V 36A TO-247AD

DatasheetIXTJ36N20

Package / CaseTO-3P-3 Full Pack

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 200V 36A (Tc) 300W (Tc) Through Hole TO-247AD

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IXTJ36N20 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

IXTJ36N20

Standard Package

Manufacturer

IXYS

Series

HiPerFET™

Packaging

Tube

Part Status

Obsolete

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

36A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

70mOhm @ 18A, 10V

Vgs(th) (Max) @ Id

4V @ 4mA

Gate Charge (Qg) (Max) @ Vgs

140nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2970pF @ 25V

FET Feature

Power Dissipation (Max)

300W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247AD

Package / Case

TO-3P-3 Full Pack

All categories

IXTJ36N20

Part NumberIXTJ36N20

ManufacturerIXYS

DescriptionMOSFET N-CH 200V 36A TO-247AD

DatasheetIXTJ36N20

Package / CaseTO-3P-3 Full Pack

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 200V 36A (Tc) 300W (Tc) Through Hole TO-247AD

IXTJ36N20 - Product Attributes

IXTJ36N20 - Tags