IXTI10N60P

Part NumberIXTI10N60P

ManufacturerIXYS

DescriptionMOSFET N-CH 600V 10A I2-PAK

DatasheetIXT(A,I,P) 10N60P

Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 600V 10A (Tc) 200W (Tc) Through Hole TO-262 (I2PAK)

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IXTI10N60P - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

IXT(A,I,P) 10N60P

Standard Package

Manufacturer

IXYS

Series

PolarHV™

Packaging

Tube

Part Status

Obsolete

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

10A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

740mOhm @ 5A, 10V

Vgs(th) (Max) @ Id

5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

32nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1610pF @ 25V

FET Feature

Power Dissipation (Max)

200W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-262 (I2PAK)

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

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