Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ IXTH6N100D2

IXTH6N100D2

IXTH6N100D2

Part NumberIXTH6N100D2

ManufacturerIXYS

DescriptionMOSFET N-CH 1000V 6A TO247

DatasheetIXT(A,P,H)6N100D2

Package / CaseTO-247-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 1000V 6A (Tc) 300W (Tc) Through Hole TO-247 (IXTH)

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IXTH6N100D2 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IXT(A,P,H)6N100D2
Standard Package	30
Manufacturer	IXYS
Series	-
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	1000V
Current - Continuous Drain (Id) @ 25°C	6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	2.2Ohm @ 3A, 0V
Vgs(th) (Max) @ Id	-
Gate Charge (Qg) (Max) @ Vgs	95nC @ 5V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2650pF @ 25V
FET Feature	Depletion Mode
Power Dissipation (Max)	300W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247 (IXTH)
Package / Case	TO-247-3

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IXTH6N100D2 - Tags

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