IXTH52N65X

Part NumberIXTH52N65X

ManufacturerIXYS

DescriptionMOSFET N-CH 650V 52A TO-247

DatasheetIXTH52N65X

Package / CaseTO-247-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 650V 52A (Tc) 660W (Tc) Through Hole TO-247 (IXTH)

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IXTH52N65X - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

IXTH52N65X

Standard Package

Manufacturer

IXYS

Series

Packaging

Tube

Part Status

Active

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

52A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

68mOhm @ 26A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

113nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

4350pF @ 25V

FET Feature

Power Dissipation (Max)

660W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247 (IXTH)

Package / Case

TO-247-3

All categories

IXTH52N65X

Part NumberIXTH52N65X

ManufacturerIXYS

DescriptionMOSFET N-CH 650V 52A TO-247

DatasheetIXTH52N65X

Package / CaseTO-247-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 650V 52A (Tc) 660W (Tc) Through Hole TO-247 (IXTH)

IXTH52N65X - Product Attributes

IXTH52N65X - Tags