IXTH32P20T

Part NumberIXTH32P20T

ManufacturerIXYS

DescriptionMOSFET P-CH 200V 32A TO-247

DatasheetIXTx32P20T

Package / CaseTO-247-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 200V 32A (Tc) 300W (Tc) Through Hole TO-247 (IXTH)

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IXTH32P20T - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

IXTx32P20T

Standard Package

Manufacturer

IXYS

Series

TrenchP™

Packaging

Tube

Part Status

Active

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

32A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

130mOhm @ 16A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

185nC @ 10V

Vgs (Max)

±15V

Input Capacitance (Ciss) (Max) @ Vds

14500pF @ 25V

FET Feature

Power Dissipation (Max)

300W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247 (IXTH)

Package / Case

TO-247-3

All categories