IXTH30N25

Part NumberIXTH30N25

ManufacturerIXYS

DescriptionMOSFET N-CH 250V 30A TO-247

DatasheetIXTH30N25

Package / CaseTO-247-3

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Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 250V 30A (Tc) 200W (Tc) Through Hole TO-247 (IXTH)

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IXTH30N25 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

IXTH30N25

Standard Package

Manufacturer

IXYS

Series

Packaging

Tube

Part Status

Active

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

250V

Current - Continuous Drain (Id) @ 25°C

30A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

75mOhm @ 15A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

136nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3950pF @ 25V

FET Feature

Power Dissipation (Max)

200W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247 (IXTH)

Package / Case

TO-247-3

All categories

IXTH30N25

Part NumberIXTH30N25

ManufacturerIXYS

DescriptionMOSFET N-CH 250V 30A TO-247

DatasheetIXTH30N25

Package / CaseTO-247-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 250V 30A (Tc) 200W (Tc) Through Hole TO-247 (IXTH)

IXTH30N25 - Product Attributes

IXTH30N25 - Tags