IXTH13N110

Part NumberIXTH13N110

ManufacturerIXYS

DescriptionMOSFET N-CH 1.1KV 13A TO-247AD

DatasheetIXTH13N110

Package / CaseTO-247-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 1100V 13A (Tc) 360W (Tc) Through Hole TO-247 (IXTH)

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IXTH13N110 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

IXTH13N110

Standard Package

Manufacturer

IXYS

Series

MegaMOS™

Packaging

Tube

Part Status

Obsolete

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

1100V

Current - Continuous Drain (Id) @ 25°C

13A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

920mOhm @ 500mA, 10V

Vgs(th) (Max) @ Id

4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

195nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

5650pF @ 25V

FET Feature

Power Dissipation (Max)

360W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247 (IXTH)

Package / Case

TO-247-3

All categories

IXTH13N110

Part NumberIXTH13N110

ManufacturerIXYS

DescriptionMOSFET N-CH 1.1KV 13A TO-247AD

DatasheetIXTH13N110

Package / CaseTO-247-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 1100V 13A (Tc) 360W (Tc) Through Hole TO-247 (IXTH)

IXTH13N110 - Product Attributes

IXTH13N110 - Tags