IXTH130N20T

Part NumberIXTH130N20T

ManufacturerIXYS

DescriptionMOSFET N-CH 200V 130A TO-247

DatasheetIXTH130N20T

Package / CaseTO-247-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 200V 130A (Tc) 830W (Tc) Through Hole TO-247 (IXTH)

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IXTH130N20T - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

IXTH130N20T

Standard Package

Manufacturer

IXYS

Series

TrenchHV™

Packaging

Tube

Part Status

Active

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

130A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

16mOhm @ 500mA, 10V

Vgs(th) (Max) @ Id

5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

150nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

8800pF @ 25V

FET Feature

Power Dissipation (Max)

830W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247 (IXTH)

Package / Case

TO-247-3

All categories

IXTH130N20T

Part NumberIXTH130N20T

ManufacturerIXYS

DescriptionMOSFET N-CH 200V 130A TO-247

DatasheetIXTH130N20T

Package / CaseTO-247-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 200V 130A (Tc) 830W (Tc) Through Hole TO-247 (IXTH)

IXTH130N20T - Product Attributes

IXTH130N20T - Tags