IXTH12N150

Part NumberIXTH12N150

ManufacturerIXYS

DescriptionMOSFET N-CH 1500V 12A TO-247

DatasheetIXT(T,H)12N150

Package / CaseTO-247-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 1500V 12A (Tc) 890W (Tc) Through Hole TO-247 (IXTH)

To learn about the specification of IXTH12N150, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add IXTH12N150 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of IXTH12N150.
We are offering IXTH12N150 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

IXTH12N150 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

IXT(T,H)12N150

Standard Package

Manufacturer

IXYS

Series

Packaging

Tube

Part Status

Active

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

1500V

Current - Continuous Drain (Id) @ 25°C

12A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

2Ohm @ 6A, 10V

Vgs(th) (Max) @ Id

4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

106nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

3720pF @ 25V

FET Feature

Power Dissipation (Max)

890W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247 (IXTH)

Package / Case

TO-247-3

All categories