IXTH120P065T

Part NumberIXTH120P065T

ManufacturerIXYS

DescriptionMOSFET P-CH 65V 120A TO-247

DatasheetIXT(A,H,P)120P065T

Package / CaseTO-247-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 65V 120A (Tc) 298W (Tc) Through Hole TO-247 (IXTH)

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IXTH120P065T - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

IXT(A,H,P)120P065T

Standard Package

Manufacturer

IXYS

Series

TrenchP™

Packaging

Tube

Part Status

Active

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

65V

Current - Continuous Drain (Id) @ 25°C

120A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

10mOhm @ 500mA, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

185nC @ 10V

Vgs (Max)

±15V

Input Capacitance (Ciss) (Max) @ Vds

13200pF @ 25V

FET Feature

Power Dissipation (Max)

298W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247 (IXTH)

Package / Case

TO-247-3

All categories