IXTH110N10L2

Part NumberIXTH110N10L2

ManufacturerIXYS

DescriptionMOSFET N-CH 100V 110A TO-247

DatasheetIXT(H,T)110N10L2

Package / CaseTO-247-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 100V 110A (Tc) 600W (Tc) Through Hole TO-247 (IXTH)

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IXTH110N10L2 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

IXT(H,T)110N10L2

Standard Package

Manufacturer

IXYS

Series

Linear L2™

Packaging

Bulk

Part Status

Active

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

110A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

18mOhm @ 500mA, 10V

Vgs(th) (Max) @ Id

4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

260nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

10500pF @ 25V

FET Feature

Power Dissipation (Max)

600W (Tc)

Operating Temperature

Mounting Type

Through Hole

Supplier Device Package

TO-247 (IXTH)

Package / Case

TO-247-3

All categories