IXTH102N20T

Part NumberIXTH102N20T

ManufacturerIXYS

DescriptionMOSFET N-CH 200V 102A TO-247

DatasheetIXT(Q,H)102N20T

Package / CaseTO-247-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 200V 102A (Tc) 750W (Tc) Through Hole TO-247 (IXTH)

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IXTH102N20T - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

IXT(Q,H)102N20T

Standard Package

Manufacturer

IXYS

Series

TrenchHV™

Packaging

Tube

Part Status

Active

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

102A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

23mOhm @ 500mA, 10V

Vgs(th) (Max) @ Id

4.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

114nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

6800pF @ 25V

FET Feature

Power Dissipation (Max)

750W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247 (IXTH)

Package / Case

TO-247-3

All categories