IXTF6N200P3

Part NumberIXTF6N200P3

ManufacturerIXYS

DescriptionMOSFET N-CH

DatasheetIXTF6N200P3

Package / CaseISOPLUSi5-Pak™

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 2000V 4A (Tc) 215W (Tc) Through Hole ISOPLUS i4-PAC™

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IXTF6N200P3 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

IXTF6N200P3

Standard Package

Manufacturer

IXYS

Series

Polar™

Packaging

Tube

Part Status

Active

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

2000V

Current - Continuous Drain (Id) @ 25°C

4A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

4.2Ohm @ 3A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

143nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3700pF @ 25V

FET Feature

Power Dissipation (Max)

215W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

ISOPLUS i4-PAC™

Package / Case

ISOPLUSi5-Pak™

All categories

IXTF6N200P3

Part NumberIXTF6N200P3

ManufacturerIXYS

DescriptionMOSFET N-CH

DatasheetIXTF6N200P3

Package / CaseISOPLUSi5-Pak™

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 2000V 4A (Tc) 215W (Tc) Through Hole ISOPLUS i4-PAC™

IXTF6N200P3 - Product Attributes

IXTF6N200P3 - Tags