IXTF200N10T

Part NumberIXTF200N10T

ManufacturerIXYS

DescriptionMOSFET N-CH 100V 90A I4-PAC-5

DatasheetIXTF200N10T

Package / Casei4-Pac™-5

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 100V 90A (Tc) 156W (Tc) Through Hole ISOPLUS i4-PAC™

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IXTF200N10T - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

IXTF200N10T

Standard Package

Manufacturer

IXYS

Series

TrenchMV™

Packaging

Tube

Part Status

Active

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

90A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

7mOhm @ 50A, 10V

Vgs(th) (Max) @ Id

4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

152nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

9400pF @ 25V

FET Feature

Power Dissipation (Max)

156W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

ISOPLUS i4-PAC™

Package / Case

i4-Pac™-5

All categories

IXTF200N10T

Part NumberIXTF200N10T

ManufacturerIXYS

DescriptionMOSFET N-CH 100V 90A I4-PAC-5

DatasheetIXTF200N10T

Package / Casei4-Pac™-5

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 100V 90A (Tc) 156W (Tc) Through Hole ISOPLUS i4-PAC™

IXTF200N10T - Product Attributes

IXTF200N10T - Tags