IXTD3N50P-2J

Part NumberIXTD3N50P-2J

ManufacturerIXYS

To learn about the specification of IXTD3N50P-2J, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add IXTD3N50P-2J with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of IXTD3N50P-2J.
We are offering IXTD3N50P-2J for competitive price in the global market, please send us a quota request for pricing. Thank you!

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Standard Package	1
Manufacturer	IXYS
Series	PolarHV™
Packaging	Bulk
Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	500V
Current - Continuous Drain (Id) @ 25°C	3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	2Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id	5.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs	9.3nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	409pF @ 25V
FET Feature	-
Power Dissipation (Max)	70W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	Die
Package / Case	Die