IXTB30N100L

Part NumberIXTB30N100L

ManufacturerIXYS

DescriptionMOSFET N-CH 1000V 30A PLUS264

DatasheetIXTB30N100L

Package / CaseTO-264-3, TO-264AA

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 1000V 30A (Tc) 800W (Tc) Through Hole PLUS264™

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IXTB30N100L - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

IXTB30N100L

Standard Package

Manufacturer

IXYS

Series

Packaging

Tube

Part Status

Active

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

1000V

Current - Continuous Drain (Id) @ 25°C

30A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

20V

Rds On (Max) @ Id, Vgs

450mOhm @ 500mA, 20V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

545nC @ 20V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

13200pF @ 25V

FET Feature

Power Dissipation (Max)

800W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PLUS264™

Package / Case

TO-264-3, TO-264AA

All categories

IXTB30N100L

Part NumberIXTB30N100L

ManufacturerIXYS

DescriptionMOSFET N-CH 1000V 30A PLUS264

DatasheetIXTB30N100L

Package / CaseTO-264-3, TO-264AA

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 1000V 30A (Tc) 800W (Tc) Through Hole PLUS264™

IXTB30N100L - Product Attributes

IXTB30N100L - Tags