IXTA6N100D2
IXTA6N100D2
Part Number IXTA6N100D2
Manufacturer IXYS
Description MOSFET N-CH 1000V 6A D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 1000V 6A (Tc) 300W (Tc) Surface Mount TO-263 (IXTA)
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IXTA6N100D2 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IXT(A,P,H)6N100D2
Standard Package 50
Manufacturer IXYS
Series -
Packaging Tube
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000V
Current - Continuous Drain (Id) @ 25°C 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) -
Rds On (Max) @ Id, Vgs 2.2Ohm @ 3A, 0V
Vgs(th) (Max) @ Id -
Gate Charge (Qg) (Max) @ Vgs 95nC @ 5V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2650pF @ 25V
FET Feature Depletion Mode
Power Dissipation (Max) 300W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-263 (IXTA)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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