IXTA1R6N100D2HV

Part NumberIXTA1R6N100D2HV

ManufacturerIXYS

DescriptionMOSFET N-CH

DatasheetIXTA1R6N100D2HV

Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 1000V 1.6A (Tj) 100W (Tc) Surface Mount TO-263HV

To learn about the specification of IXTA1R6N100D2HV, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add IXTA1R6N100D2HV with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of IXTA1R6N100D2HV.
We are offering IXTA1R6N100D2HV for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

IXTA1R6N100D2HV - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

IXTA1R6N100D2HV

Standard Package

Manufacturer

IXYS

Series

Part Status

Active

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

1000V

Current - Continuous Drain (Id) @ 25°C

1.6A (Tj)

Drive Voltage (Max Rds On, Min Rds On)

Rds On (Max) @ Id, Vgs

10Ohm @ 800mA, 0V

Vgs(th) (Max) @ Id

4.5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

27nC @ 5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

645pF @ 10V

FET Feature

Depletion Mode

Power Dissipation (Max)

100W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-263HV

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

All categories

IXTA1R6N100D2HV

Part NumberIXTA1R6N100D2HV

ManufacturerIXYS

DescriptionMOSFET N-CH

DatasheetIXTA1R6N100D2HV

Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 1000V 1.6A (Tj) 100W (Tc) Surface Mount TO-263HV

IXTA1R6N100D2HV - Product Attributes

IXTA1R6N100D2HV - Tags