IXTA1R6N100D2

Part NumberIXTA1R6N100D2

ManufacturerIXYS

DescriptionMOSFET N-CH 1000V 1.6A D2PAK

DatasheetIXT(Y,A,P)1R6N100D2

Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 1000V 1.6A (Tc) 100W (Tc) Surface Mount TO-263 (IXTA)

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IXTA1R6N100D2 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

IXT(Y,A,P)1R6N100D2

Standard Package

Manufacturer

IXYS

Series

Packaging

Tube

Part Status

Active

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

1000V

Current - Continuous Drain (Id) @ 25°C

1.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

10Ohm @ 800mA, 0V

Vgs(th) (Max) @ Id

Gate Charge (Qg) (Max) @ Vgs

27nC @ 5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

645pF @ 25V

FET Feature

Depletion Mode

Power Dissipation (Max)

100W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-263 (IXTA)

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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