IXTA1R4N100P

Part NumberIXTA1R4N100P

ManufacturerIXYS

DescriptionMOSFET N-CH 1000V 1.4A TO-263

DatasheetIXT(A,P,Y)1R4N100P

Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 1000V 1.4A (Tc) 63W (Tc) Surface Mount TO-263 (IXTA)

To learn about the specification of IXTA1R4N100P, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add IXTA1R4N100P with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of IXTA1R4N100P.
We are offering IXTA1R4N100P for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

IXTA1R4N100P - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

IXT(A,P,Y)1R4N100P

Standard Package

Manufacturer

IXYS

Series

Polar™

Packaging

Tube

Part Status

Active

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

1000V

Current - Continuous Drain (Id) @ 25°C

1.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

11Ohm @ 500mA, 10V

Vgs(th) (Max) @ Id

4.5V @ 50µA

Gate Charge (Qg) (Max) @ Vgs

17.8nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

450pF @ 25V

FET Feature

Power Dissipation (Max)

63W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-263 (IXTA)

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

All categories