IXTA1N200P3HV
IXTA1N200P3HV
Part Number IXTA1N200P3HV
Manufacturer IXYS
Description MOSFET N-CH 2000V 1A TO-263HV
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 2000V 1A (Tc) 125W (Tc) Surface Mount TO-263 (IXTA)
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IXTA1N200P3HV - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IXTx1N200P3(HV)
Standard Package 50
Manufacturer IXYS
Series -
Packaging Tube
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 2000V
Current - Continuous Drain (Id) @ 25°C 1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 40Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 23.5nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 646pF @ 25V
FET Feature -
Power Dissipation (Max) 125W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-263 (IXTA)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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