IXTA08N100D2HV

Part NumberIXTA08N100D2HV

ManufacturerIXYS

DescriptionMOSFET N-CH

DatasheetIXTA08N100D2HV

Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 1000V 800mA (Tj) 60W (Tc) Surface Mount TO-263HV

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IXTA08N100D2HV - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

IXTA08N100D2HV

Standard Package

Manufacturer

IXYS

Series

Part Status

Active

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

1000V

Current - Continuous Drain (Id) @ 25°C

800mA (Tj)

Drive Voltage (Max Rds On, Min Rds On)

Rds On (Max) @ Id, Vgs

21Ohm @ 400mA, 0V

Vgs(th) (Max) @ Id

4V @ 25µA

Gate Charge (Qg) (Max) @ Vgs

14.6nC @ 5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

325pF @ 25V

FET Feature

Depletion Mode

Power Dissipation (Max)

60W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-263HV

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

All categories

IXTA08N100D2HV

Part NumberIXTA08N100D2HV

ManufacturerIXYS

DescriptionMOSFET N-CH

DatasheetIXTA08N100D2HV

Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 1000V 800mA (Tj) 60W (Tc) Surface Mount TO-263HV

IXTA08N100D2HV - Product Attributes

IXTA08N100D2HV - Tags