IXGQ35N120BD1


IXGQ35N120BD1

Part NumberIXGQ35N120BD1

Manufacturer

Description

Datasheet

Package / CaseTO-3P-3, SC-65-3

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Lead TimeTo be Confirmed

Detailed Description

IXGQ35N120BD1 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - IGBTs - Single
Datasheet
Standard Package30
ManufacturerIXYS
Series-
PackagingTube
Part StatusActive
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)75A
Current - Collector Pulsed (Icm)200A
Vce(on) (Max) @ Vge, Ic3.3V @ 15V, 35A
Power - Max400W
Switching Energy900µJ (on), 3.8mJ (off)
Input TypeStandard
Gate Charge140nC
Td (on/off) @ 25°C40ns/270ns
Test Condition960V, 35A, 3Ohm, 15V
Reverse Recovery Time (trr)40ns
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-3P-3, SC-65-3
Supplier Device PackageTO-3P
Base Part NumberIXG*35N120

IXGQ35N120BD1 - Tags

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