IXFX24N100F

Part NumberIXFX24N100F

ManufacturerIXYS-RF

DescriptionMOSFET N-CH 1000V 24A PLUS247-3

DatasheetIXFK24N100F, IXFX24N100F

Package / CaseTO-247-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 1000V 24A (Tc) 560W (Tc) Through Hole PLUS247™-3

To learn about the specification of IXFX24N100F, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add IXFX24N100F with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of IXFX24N100F.
We are offering IXFX24N100F for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

IXFX24N100F - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

IXFK24N100F, IXFX24N100F

Standard Package

Manufacturer

IXYS-RF

Series

HiPerRF™

Packaging

Tube

Part Status

Obsolete

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

1000V

Current - Continuous Drain (Id) @ 25°C

24A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

390mOhm @ 12A, 10V

Vgs(th) (Max) @ Id

5.5V @ 8mA

Gate Charge (Qg) (Max) @ Vgs

195nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

6600pF @ 25V

FET Feature

Power Dissipation (Max)

560W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PLUS247™-3

Package / Case

TO-247-3

All categories