IXFX210N17T

Part NumberIXFX210N17T

ManufacturerIXYS

DescriptionMOSFET N-CH 170V 210A PLUS247

DatasheetIXF(K,X)210N17T

Package / CaseTO-247-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 170V 210A (Tc) 1150W (Tc) Through Hole PLUS247™-3

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IXFX210N17T - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

IXF(K,X)210N17T

Standard Package

Manufacturer

IXYS

Series

GigaMOS™

Packaging

Tube

Part Status

Obsolete

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

170V

Current - Continuous Drain (Id) @ 25°C

210A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

7.5mOhm @ 60A, 10V

Vgs(th) (Max) @ Id

5V @ 4mA

Gate Charge (Qg) (Max) @ Vgs

285nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

18800pF @ 25V

FET Feature

Power Dissipation (Max)

1150W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PLUS247™-3

Package / Case

TO-247-3

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