IXFV52N30P


IXFV52N30P

Part NumberIXFV52N30P

Manufacturer

Description

Datasheet

Package / CaseTO-220-3, Short Tab

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

IXFV52N30P - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package50
ManufacturerIXYS
SeriesPolarHT™ HiPerFET™
PackagingTube
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)300V
Current - Continuous Drain (Id) @ 25°C52A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs66mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs110nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3490pF @ 25V
FET Feature-
Power Dissipation (Max)400W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePLUS220
Package / CaseTO-220-3, Short Tab

IXFV52N30P - Tags

IXFV52N30P IXFV52N30P PDF IXFV52N30P datasheet IXFV52N30P specification IXFV52N30P image IXFV52N30P India Renesas Electronics India IXFV52N30P buy IXFV52N30P IXFV52N30P price IXFV52N30P distributor IXFV52N30P supplier IXFV52N30P wholesales