IXFV12N120P

Part NumberIXFV12N120P

ManufacturerIXYS

DescriptionMOSFET N-CH 1200V 12A PLUS220

DatasheetIXF(H,V)12N120P/S

Package / CaseTO-220-3, Short Tab

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 1200V 12A (Tc) 543W (Tc) Through Hole PLUS220

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IXFV12N120P - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

IXF(H,V)12N120P/S

Standard Package

Manufacturer

IXYS

Series

HiPerFET™, PolarP2™

Packaging

Tube

Part Status

Obsolete

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

1200V

Current - Continuous Drain (Id) @ 25°C

12A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.35Ohm @ 500mA, 10V

Vgs(th) (Max) @ Id

6.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

103nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

5400pF @ 25V

FET Feature

Power Dissipation (Max)

543W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PLUS220

Package / Case

TO-220-3, Short Tab

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